參數(shù)資料
型號: IDT74SSTUBF32868ABKG8
廠商: IDT, Integrated Device Technology Inc
文件頁數(shù): 2/21頁
文件大?。?/td> 0K
描述: IC BUFFER 28BIT CONF DDR2 176BGA
標(biāo)準(zhǔn)包裝: 2,000
邏輯類型: 1:1、1:2 可配置寄存緩沖器
電源電壓: 1.7 V ~ 1.9 V
位數(shù): 28
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 176-TFBGA
供應(yīng)商設(shè)備封裝: 176-CABGA(6x15)
包裝: 帶卷 (TR)
其它名稱: 74SSTUBF32868ABKG8
IDT74SSTUBF32868A
28-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2
COMMERCIAL TEMPERATURE GRADE
28-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2
10
IDT74SSTUBF32868A
7068/12
Absolute Maximum Ratings
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Output Buffer Characteristics
Output edge rates over recommended operating free-air temperature range
Item
Rating
Supply Voltage, VDD
-0.5V to 2.5V
Input Voltage Range, VI1
1
The input and output negative voltage ratings may be exceeded if the ratings of the I/P and
O/P clamp current are observed.
-0.5V to VDD + 2.5V
Output Voltage Range, VO1,2
2
This current will flow only when the output is in the high state level VO > VDDQ.
-0.5V to VDDQ + 0.5V
Input Clamp Current, IIK
±50mA
Output Clamp Current, IOK
±50mA
Continuous Output Clamp Current, IO
±50mA
Continuous Current through each VDD or GND
±100mA
Package Thermal Impedance (
θja)3
3
The package thermal impedance is calculated in accordance with JESD 51.
0m/s Airflow
40.4
° C/W
1m/s Airflow
29.1
° C/W
Storage Temperature, TSTG
-65 to +150
° C
Parameter
VDD = 1.8V ± 0.1V
Units
Min.
Max.
dV/dt_r
1
4
V/ns
dV/dt_f
1
4
V/ns
dV/dt_
Δ1
1
Difference between dV/dt_r (rising edge rate) and dV/dt_f (falling edge rate).
1V/ns
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