參數(shù)資料
型號: IDTIDT71P71804167BQ
廠商: Integrated Device Technology, Inc.
英文描述: 18Mb Pipelined DDR⑩II SRAM Burst of 2
中文描述: 35.7流水線的DDR II SRAM的突發(fā)⑩2
文件頁數(shù): 9/23頁
文件大?。?/td> 241K
代理商: IDTIDT71P71804167BQ
6.42
9
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
18 Mb DDR II SRAM Burst of 2 Commercial Temperature Range
Absolute Maximum Ratings
(1) (2)
Capacitance
(T
A
= +25°C, f = 1.0MHz)
(1)
Symbol
Rating
Value
Unit
V
TERM
Supply Voltage on V
DD
wth
Respect to GND
–0.5 to +2.9
V
V
TERM
Supply Voltage on V
DDQ
wth
Respect to GND
–0.5 to V
DD
+0.3
V
V
TERM
Voltage on Input termnals with
respect to GND
–0.5 to V
DD
+0.3
V
V
TERM
Voltage on Output and I/O
termnals wth respect to GND.
–0.5 to V
DDQ
+0.3
V
T
BIAS
Temperature Under Bias
–55 to +125
°C
T
STG
Storage Temperature
–65 to +150
°C
I
OUT
Continuous Current into Outputs
+ 20
mA
6112 tbl 05
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
DD
= 1.8V
V
DDQ
= 1.5V
5
pF
C
CLK
Clock Input Capacitance
6
pF
C
O
Output Capacitance
7
pF
C
DQ
DQ I/O Capacitance
7
pF
6112 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximumrating conditions for extended periods may affect
reliability.
2. V
DDQ
must not exceed V
DD
during normal operation.
NOTE:
1. Tested at characterization and retested after any design or process change that
may affect these parameters.
Recommended DC Operating and
Temperature Conditions
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Power Supply
Voltage
1.7
1.8
1.9
V
V
DDQ
I/O Supply Voltage
1.4
1.5
V
DD
V
V
SS
Ground
0
0
0
V
V
REF
Input Reference
Voltage
0.68
V
DDQ
/2
0.95
V
T
A
Ambient
Temperature
(1)
0
25
70
o
c
6112 tbl 04
NOTE:
1. During production testing, the case temperature equals the ambient tempera-
ture.
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