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參數(shù)資料
| 型號： | IDTIDT71P79604250BQI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| 中文描述： | 35.7流水線⑩二二氧化硅的DDR SRAM的爆裂2 |
| 文件頁數(shù)： | 21/23頁 |
| 文件大?。?/td> | 641K |
| 代理商： | IDTIDT71P79604250BQI |
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IDT71P79204 (2Mx8-Bit), 71P79104 (2Mx9-Bit), 71P79804 (1Mx18-Bit) 71P79604 (512Kx36-Bit)
18 Mb DDR II SIO SRAM Burst of 2 Commercial and Industrial Temperature Ranges
Package Diagram Outline for 165-Ball Fine Pitch Grid Array
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDTIDT71P79604267BQ | 18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79604267BQI | 18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79804167BQ | 18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79804167BQI | 18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79804200BQ | 18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDTIDT71P79604267BQ | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79604267BQI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79804167BQ | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79804167BQI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79804200BQ | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
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