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Document Number: 83613
www.vishay.com
Revision 17-August-01
2–104
FEATURES
High Current Transfer Ratio, 75% to 450%
Minimum Current Transfer Ratio, 10%
Guaranteed at IF=1.0mA
High Collector-Emitter Voltage, BVCEO=70V
Long Term Stability
Industry Standard DIP Package
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
DESCRIPTION
The IL201/202/203 are optically coupled pairs
employing a Gallium Arsenide infrared LED and a
Silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electri-
cal isolation between input and output. The
IL201/202/203 can be used to replace relays and
transformers in many digital interface applica-
tions, as well as analog applications such as CRT
modulation.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25
°C....................... 100 mW
Derate Linearly from 25
°C................. 1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage,
BVCEO ........................................................ 70 V
Emitter-Collector Breakdown Voltage,
BVECO ....................................................... 7.0 V
Collector-Base Breakdown Voltage,
BVCBO ....................................................... 70 V
Power Dissipation.................................... 200 mW
Derate Linearly from 25
°C................... 2.6 mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ...... 5300 VRMS
Total Package Dissipation at 25
°C A
(LED + Detector).................................. 250 mW
Derate Linearly from 25
°C................... 3.3 mW/°C
Creepage ...............................................
≥7.0 min
Clearance ...............................................
≥7.0 min
Storage Temperature ................ –55
°C to +150°C
Operating Temperature ............ –55
°C to +100°C
Lead Soldering Time at 260
°C ..................10 sec.
V
DE
Characteristics 0
°C to 70°C unless otherwise specied
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
VF
—
1.2
1.5
V
IF=20 mA
Forward Voltage
—
1.0
1.2
IF=1.0 mA
Breakdown Voltage
6.0
20
—
IR=10 A
Reverse Current
IR
—
0.1
10
A
VR=6.0 V
TA=25°C
Detector
Transistor Gain
HFE
100
200
—
VCE=5.0 V
IC=100 A
Breakdown Voltage
Collector-Emitter
BVCEO
70
——V
IC=100 A
Breakdown Voltage
Emitter-Collector
BVECO
7.0
10
—
IE=100 A
Breakdown Voltage
Collector-Base
BVCBO
70
90
—
IC=10 A
Leakage Current
Collector-Emitter
ICEO
—
5.0
50
nA
VCE=10 V,
TA=25°C
Package
Base Current Transfer
Ratio
CTRCB
0.15
—
%
IF=10 mA
VCB=10 V
VCEsat
—
0.4
V
IF=10 mA
IC=2.0 mA
DC Current Transfer Ratio
IL201
IL202
IL203
CTR
75
125
225
100
200
300
150
250
450
%
IF=10 mA,
VCE=10 V
DC Current Transfer Ratio
IL201
IL202
IL203
CTR
10
30
50
——%
IF=1.0 mA,
VCE=10 V
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°–9°
.300–.347
(7.62–8.81)
4
°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
IL201/IL202/IL203
Phototransistor
Optocoupler