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參數(shù)資料
| 型號(hào)： | IL213AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | ROHS COMPLIANT, SOIC-8 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | IL213AT |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83615
2
Rev. 1.9, 21-Dec-10
IL211AT, IL212AT, IL213AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8 Package
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
VISO
4000
VRMS
Total package dissipation
LED and detector
Ptot
240
mW
Derate linearly from 25 °C
3.2
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering time
at 260 °C
10
s
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.3
1.5
V
Reverse current
VR = 6 V
IR
0.1
100
μA
Capacitance
VR = 0 V
CO
13
pF
OUTPUT
Collector emitter breakdown voltage
IC = 10 μA
BVCEO
30
V
Emitter collector breakdown voltage
IE = 10 μA
BVECO
7V
Collector dark current
VCE = 10 V
ICEO
550
nA
Collector emitter capacitance
VCE = 0 V
CCE
10
pF
COUPLER
Saturation voltage, collector emitter
IF = 10 mA
VCEsat
0.4
V
Isolation test voltage
1 s
VISO
4000
VRMS
Capacitance (input to output)
CIO
0.5
50
pF
Resistance (input to output)
RIO
100
G
Ω
Collector emitter breakdown voltage
IC = 10 μA
BVCEO
30
V
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Current transfer ratio
IF = 10 mA, VCE = 5 V
IL211AT
CTR
20
50
%
IL212AT
CTR
50
80
%
IL213AT
CTR
100
130
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Switching time
IC = 2 mA, RL = 100
Ω,
VCC = 10 V
ton, toff
3μs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
相關(guān)PDF資料 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IL213T | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Optoelectronic |
| IL215 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT |
| IL215A | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER |
| IL215AT | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR >20% RoHS:否 制造商:Vishay Semiconductors 輸入類(lèi)型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| IL215T | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Optoelectronic |
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