參數(shù)資料
型號: IL217AT
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 光電耦合器
英文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝: SOIC-8
文件頁數(shù): 1/3頁
文件大小: 395K
代理商: IL217AT
Document Number: 83616
www.vishay.com
Revision 17-August-01
2–114
FEATURES
High Current Transfer Ratio, IF=1.0 mA
IL215AT—20% Minimum
IL216AT—50% Minimum
IL217AT—100% Minimum
Isolation Voltage, 3000 VRMS
Electrical Specications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reow Soldering
Underwriters Lab File #E52744
(Code Letter Y)
VDE 0884 Available with Option 1
DESCRIPTION
The IL215AT/216AT/217AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating through-
holes requirements, this package conforms to stan-
dards for surface mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage.................................. 6.0 V
Continuous Forward Current ..................... 60 mA
Power Dissipation at 25
°C........................ 90 mW
Derate Linearly from 25
°C .................. 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ........... 30 V
Emitter-Collector Breakdown Voltage .......... 7.0 V
Collector-Base Breakdown Voltage .............. 70 V
ICMAX DC..................................................... 50 mA
ICMAX (t<1.0 ms) ...................................... 100 mA
Power Dissipation .................................. 150 mW
Derate Linearly from 25
°C .................. 2.0 mW/°C
Package
Total Package Dissipation at 25
°C Ambient
(LED + Detector)................................. 240 mW
Derate Linearly from 25
°C .................. 3.2 mW/°C
Storage Temperature. .............. –55°C to +150
°C
Operating Temperature ........... –55°C to +100
°C
Soldering Time at 260
°C ..........................10 sec.
V
DE
Characteristics TA=25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
VF
1.0
1.5
V
IF=1.0mA
Reverse Current
IR
0.1
100
A
VR=6.0 V
Capacitance
CO
—13
pF
VR=0
Detector
Breakdown Voltage
BVCEO
30
V
IC=10 A
BVECO
7.0
V
IE=10 A
Dark Current,
Collector-Emitter
ICEOdark
5.0
50
nA
VCE=10 V
IF=0
Capacitance,
Collector-Emitter
CCE
—10
pF
VCE=0
Package
DC Current
Transfer
Ratio
IL215AT
CTRDC
20
50
%
IF=1.0 mA,
VCE=5.0 V
IL216AT
50
80
IL217AT
100
130
Saturation Voltage,
Collector-Emitter
VCEsat
0.4
IF=1.0 mA,
IC=0.1 mA
Isolation Test Voltage
VIO
3000
VRMS
1 sec.
Capacitance,
Input to Output
CIO
0.5
pF
Resistance,
Input to Output
RIO
100
G
Switching Time
ton, toff
3.0
s
IC=2.0 mA,
RL=100 ,
VCC=10 V
Dimensions in inches (mm)
40
°
.240
(6.10)
.154
±.005
(3.91
±.13)
.050 (1.27)
typ.
.016 (.41)
.192
±.005
(4.88
±.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±.0015 (.04)
max.
.015
±.002
(.38
±.05)
.008 (.20)
7
°
.058
±.005
(1.49
±.13)
.125
±.005
(3.18
±.13)
Pin One ID
.120
±.005
(3.05
±.13)
CL
.021 (.53)
5
° max.
R.010
(.25) max.
.020
±.004
(.51
±.10)
2 plcs.
1
2
3
4
Anode
Cathode
NC
8
7
6
5
NC
Base
Collector
Emitter
IL215AT/216AT/217AT
Phototransistor
Small Outline Surface Mount
Optocoupler
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