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參數(shù)資料
| 型號(hào)： | IL5 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 光電耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR >50% |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | IL5 |
www.vishay.com
296
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83612
Rev. 1.6, 10-Dec-08
IL1, IL2, IL5
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
SYMBOL
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CE
CTR
CE
CTR
CE
CTR
CB
CTR
CB
CTR
CB
MIN.
TYP.
75
170
100
80
200
130
0.25
0.25
0.25
MAX.
UNIT
%
%
%
%
%
%
%
%
%
Current transfer ratio
(collector emitter saturated)
I
F
= 10 mA, V
CE
= 0.4 V
Current transfer ratio
(collector emitter)
I
F
= 10 mA, V
CE
= 10 V
20
100
50
300
500
400
Current transfer ratio
(collector base)
I
F
= 10 mA, V
CB
= 9.3 V
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Current time
V
CE
= 5 V, R
L
= 75
Ω
,
t
P
measured at 50 % of output
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
I
F
20
4
10
0.8
1.7
1.7
1.9
2.6
2.6
0.2
0.4
0.4
1.4
2.2
2.2
0.7
1.2
1.1
1.4
2.3
2.5
mA
Delay time
V
CE
= 5 V, R
L
= 75
Ω
,
t
P
measured at 50 % of output
t
D
μs
Rise time
V
CE
= 5 V, R
L
= 75
Ω
,
t
P
measured at 50 % of output
t
r
μs
Storage time
V
CE
= 5 V, R
L
= 75
Ω
,
t
P
measured at 50 % of output
t
s
μs
Fall time
V
CE
= 5 V, R
L
= 75
Ω
,
t
P
measured at 50 % of output
t
f
μs
Propagation H to L
V
CE
= 5 V, R
L
= 75
Ω
,
t
P
measured at 50 % of output
t
PHL
μs
Propagation L to H
V
CE
= 5 V, R
L
= 75
Ω
,
t
P
measured at 50 % of output
t
PLH
μs
SATURATED
Current time
V
CE
= 0.4 V, R
L
= 1.0 k
Ω
,
V
CL
= 5 V, V
TH
= 1.5 V
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
IL1
IL2
IL5
I
F
20
5
10
0.8
1
1.7
1.2
2
7
7.4
5.4
4.6
mA
Delay time
V
CE
= 0.4 V, R
L
= 1.0 k
Ω
,
V
CL
= 5 V, V
TH
= 1.5 V
t
D
μs
Rise time
V
CE
= 0.4 V, R
L
= 1.0 k
Ω
,
V
CL
= 5 V, V
TH
= 1.5 V
t
r
μs
Storage time
V
CE
= 0.4 V, R
L
= 1.0 k
Ω
,
V
CL
= 5 V, V
TH
= 1.5 V
t
S
μs
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