參數(shù)資料
型號(hào)： ILD615-1
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 光電耦合器
英文描述： Optocoupler DC-IN 2-CH Transistor DC-OUT 8-Pin PDIP
中文描述： Transistor Output Optocouplers Phototransistor Out Dual CTR 40-80%
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 203K
代理商： ILD615-1
Document Number: 83652
Rev. 1.6, 04-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
3
ILD615, ILQ615
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(1)
Package power dissipation ILD615
Derate linearly from 25 °C
Package power dissipation ILQ615
Derate linearly from 25 °C
Isolation test voltage
Isolation voltage
Total power dissipation
Creepage distance
Clearance distance
T
stg
T
amb
T
j
T
sld
- 55 to + 150
- 55 to + 100
100
260
400
5.33
500
6.67
5300
890
250
7
7
10
12
10
11
°C
°C
°C
°C
mW
mW/°C
mW
mW/°C
V
RMS
V
P
mW
mm
mm
2 mm distance from case bottom
t = 1 s
V
ISO
V
IORM
P
tot
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
ELECTRICAL CHARACTERISTCS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current, -1, -2
Collector emitter leakage current, -3, -4
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Thermal resistance, junction to lead
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match
COUPLER
Capacitance (input to output)
Insulation resistance
Channel to channel isolation
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA
I
R
= 10 μA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
F
V
BR
I
R
C
O
R
THJL
1
6
1.15
30
0.01
25
750
1.3
V
V
μA
pF
K/W
10
V
CE
= 5 V, f = 1 MHz
V
CE
= 10 V
V
CE
= 10 V
I
CE
= 0.5 mA
I
E
= 0.1 mA
C
CE
I
CEO
I
CEO
BV
CEO
BV
ECO
R
THJL
6.8
2
5
pF
nA
nA
V
V
K/W
50
100
70
7
500
I
F
= 10 mA, V
CE
= 5 V
CTRX/CTRY
1 to 1
2 to 1
V
IO
= 0 V, f = 1 MHz
V
IO
= 500 V, T
A
= 25 °C
C
IO
R
S
0.8
10
14
pF
VAC
10
12
500
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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