參數(shù)資料
型號(hào): ILH100
廠商: SIEMENS A G
元件分類(lèi): 光電耦合器
英文描述: HERMETIC PHOTOTRANSISTOR OPTOCOUPLER
中文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝: HERMETIC SEALED, DIP-8
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 215K
代理商: ILH100
5–5
ILH100
Figure 20. Propagation delay versus temperatureand
collector load resistance for I
F
=5 mA
1000
Vcc = 5.25V, Rbe = open, Vth = 1.5V
Figure 21. Propagation delay versus temperatureand
collector load resistance for I
F
=10 mA
1000
Vcc = 5.25V, Rbe = open, Vth = 1.5V
Figure 22. Propagation delay versus temperatureand
collector load resistance for I
F
=20 mA
1000
Vcc = 5.25V, Rbe = open, Vth = 1.5V
Figure 23. Propagation delay versus temperatureand
collector load resistance for I
F
=5 mA
30
Vcc = 5.25V, Rbe = 47K
, Vth = 1.5V
125
100
75
50
25
0
-25
Ta - Ambient Temperature -
°
C
-50
1
10
100
47K
tpHL
47K
tpLH
10K
tpHL
10K
tpLH
2.2K
tpHL
2.2K
tpLH
P
μ
s
125
100
75
50
25
0
-25
Ta - Ambient Temperature -
°
C
-50
1
10
100
47K
tpHL
47K
tpLH
10K
tpHL
10K
tpLH
2.2K
tpHL
2.2K
tpLH
P
μ
s
125
100
75
50
25
0
-25
Ta - Ambient Temperature -
°
C
-50
1
10
100
47K
tpHL
47K
tpLH
10K
tpHL
10K
tpLH
2.2K
tpHL
2.2K
tpLH
P
μ
s
125
100
75
50
25
0
-25
Ta - Ambient Temperature -
°
C
-50
0
5
10
15
20
25
47K
tpHL
47K
tpLH
10K
tpHL
10K
tpLH
2.2K
tpLH
2.2K
tpHL
P
μ
s
Figure 16. Normalized non-saturated and saturated HFE
at T
A
=70
°
C versus base current
1.5
Normalized to:
Ib = 20
μ
A, Vce=10V
Ta=25
°
C
Figure 17. Collector-emitter leakage current versus
temperature
5
I
Figure 18. Base emitter voltage versus base current
1000
Figure 19. Base emitter capacitance versus base emitter
voltage
C
1000
100
10
1
0.0
0.5
1.0
Ib - Base Current -
μ
A
NHFE
Vce = 10V
NHFE(SAT)
Vce = 0.4V
N
100
80
60
40
20
0
-20
10
10
10
10
10
10
10
10
-2
-1
0
1
2
3
4
Ta - Ambient Temperature -
°
C
Ta - Ambient Temperature -
C
WORST
CASE
TYPICAL
Vce = 10V
0.8
0.7
0.6
0.5
0.4
.001
.01
.1
1
10
100
Vbe - Base Emitter Voltage - V
μ
A
Ta = 25
°
C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
10000
Vbe - Base Emitter Voltage - V
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