參數(shù)資料
型號： ILQ66
廠商： SIEMENS AG
英文描述： PHOTODARLINGTON OPTOCOUPLER
中文描述： PHOTODARLINGTON光耦合器
文件頁數(shù)： 1/3頁
文件大?。?/td> 398K
代理商： ILQ66
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
2–95
March 1, 2000-00
SINGLE CHANNEL
IL66
ILD66
ILQ66
DUAL CHANNEL
QUAD CHANNEL
Photodarlington Optocoupler
FEATURES
Internal RBE for High Stability
Current Transfer Ratio is Tested
at 2.0 mA and 0.7 mA Input
IL/ILD/ILQ66 Series:
–1, 100% min. at
–2, 300% min. at
–3, 400% min. at
–4, 500% min. at
Four Available CTR Categories per
Package Type
BV
CEO
>60 V
Standard DIP Packages
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
D E
I
I
I
I
F
F
F
F
=2.0 mA,
=2.0 mA,
=0.7 mA,
=2.0 mA,
V
V
V
V
CE
CE
CE
CE
=10 V
=10 V
=10 V
=5.0 V
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled iso-
lators employing Gallium Arsenide infrared emit-
ters and silicon photodarlington detectors.
Switching can be accomplished while maintaining
a high degree of isolation between driving and
load circuits, with no crosstalk between channels.
Maximum Ratings
Emitter
Each Channel
Peak Reverse Voltage .................................... 6.0 V
Continuous Forward Current ........................60 mA
Power Dissipation at 25
°
C......................... 100 mW
Derate Linearly from 25
°
C................... 1.33 mW/
Detector
(Each Channel)
Power Dissipation at 25
°
C Ambient .......... 150 mW
Derate Linearly from 25
°
C..................... 2.0 mW/
Package
Isolation Test Voltage (t=1.0 sec.)......... 5300 V
Total Package Power Dissipation at 25
IL66.......................................................... 250 mW
ILD66....................................................... 400 mW
ILQ66....................................................... 500 mW
Derate Linearly from 25
°
C
IL66...................................................... 3.3 mW/
ILD66................................................. 5.33 mW/
ILQ66................................................. 6.67 mW/
Creepage ....................................................
Clearance....................................................
Comparative Tracking Index .............................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................
V
IO
=500 V,
T
A
=100
°
C.............................
Storage Temperature................... –55
Operating Temperature ............... –55°C to +100
Lead Soldering Time at 260
°
C
°
C
RMS
°
C
°
°
°
C
C
C
≥
≥
7 min
7 min
≥
≥
10
10
12
11
°
°
C
C
°
C to +125
°
C....................10 sec.
V
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°
–
9
°
.300
–
.347
(7.62
–
8.81)
4
°
typ.
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4
°
typ.
.100 (2.54) typ.
10
°
3
°
–
9
°
.008 (.20)
.012 (.30)
.300 (7.62)
typ.
.018 (.46)
.022 (.56)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4
3
2
1
.031 (0.79)
.050 (1.27)
5
6
7
8
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4
°
.100 (2.54)typ.
10
°
typ.
3
°
–
9
°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
3
6
5
4
Anode
Cathode
NC
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
1
2
3
4
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Dimensions in inches (mm)
Single Channel
Dual Channel
Quad Channel
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ILQ66-1 功能描述:晶體管輸出光電耦合器 Photodarlington Out Quad CTR >100% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ66-2 功能描述:晶體管輸出光電耦合器 Photodarlington Out Quad CTR >300% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ66-3 功能描述:晶體管輸出光電耦合器 Photodarlington Out Quad CTR >400% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
ILQ66-4 功能描述:晶體管輸出光電耦合器 Photodarlington Out Quad CTR >500% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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