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參數(shù)資料
| 型號(hào)： | IM6472-16L |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | FO-57BVAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 15V的五（巴西）直資|佛57BVAR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 35K |
| 代理商： | IM6472-16L |
C-Band Internally-Matched
Power GaAs FETs (IMFETs)
6.4 to 7.2 GHz
Technical Data
Description
The Hewlett-Packard IM6472-xL
series of internally-matched GaAs
power FETs, or IMFETs is
designed to provide efficient
power amplification in the 6.4 to
7.2 GHz communications band.
Designed for SatCom and Point-
to-Point Radio communications,
these products offer the system
designer benefits associated with
higher output power, gain, and net
power-added efficiency.
[1]
Typi-
cal output power of the IM6472-4L
exceeds 4 watts, with similar
performance advantages for the
IM6472-8L, -16L and -32L models.
Higher levels of gain and operat-
ing efficiency are the result of
leading edge GaAs MESFET
technology developed at HP.
HP IMFETs are manufactured
using hybrid construction tech-
niques, combining GaAs power
MESFETs with low loss, thin-film
substrates. Internal 50 ohm
matching networks eliminate the
RF matching, handling, and die
attach difficulties usually associ-
ated with using large geometry,
high power chip devices. Auto-
mated assembly and test proce-
C21A
Features
High Output Power:
IM6472-4L: 36.5 dBm typ.
( 4.5W)
IM6472-8L: 39.5 dBm typ.
( 9W)
IM6472-16L: 42.5 dBm typ.
( 18W)
IM6472-32L: 45.0 dBm typ.
( 32W)
High Power-Added
Efficiency: Up to 40%
High Linearity:
-45 dBc IMD
3
@ Specified
Output Single Carrier Level
Superior Gain Flatness:
±
0.5 dB max.
Linear, Class A Operation
Input and Output Internally
Matched To 50 Ohms
Industry Compatible
Packages
Applications
Solid State Power
Amplifiers for Satellite
Earth Station Uplink
Digital Point-to-Point and
Point-to-Multipoint
Communications
C24A
dures provide excellent unit-to-
unit repeatability and uniformity
for easier cascading. HP IMFETs
are housed in copper/ceramic
packages to allow for maximum
heat transfer from the GaAs FET
device to the heatsink. The
sealing process used is a commer-
cial standard, non-hermetic epoxy,
proven for environmental protec-
tion. Each unit conforms to the
industry’s standard outline
dimensions. Electrical perfor-
mance is guaranteed at +25
°
C.
Note:
1. Net power added efficiency = (P
out
- P
in
)/(I
ds
x V
ds
), where P
out
and P
in
are in watts.
IM6472-4L
IM6472-8L
IM6472-16L
IM6472-32L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IM6472-32L | TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 28A I(D) | FO-57BVAR |
| IM6472-4L | TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | FO-57BVAR |
| IM6472-8L | TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | FO-57BVAR |
| IMAT5011 | TRANSISTOR | MOSFET POWER MODULE | COMPLEX BRIDGE | 500V V(BR)DSS | 30A I(D) |
| IMB10 | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IM6472-32L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 28A I(D) | FO-57BVAR |
| IM6472-4L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | FO-57BVAR |
| IM6472-8L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | FO-57BVAR |
| IM64883B | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Universal Asynchronous Receiver Transmitter(UART) |
| IM6553 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Universal Asynchronous Receiver Transmitter(UART) |
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