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參數(shù)資料
| 型號(hào)： | IM6472-8L |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | FO-57BVAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 15V的五（巴西）直資|佛57BVAR |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | IM6472-8L |
3
IM6472-xL Electrical Characteristics (T
Flange
= 25oC)
Part Number
Parameters
Output Power @ 1 dB
Gain Compression
I
DSQ
= 4.0 A
I
DSQ
= 8.0 A
Power-Added Efficiency
@ 1 dB Gain Compression
Drain Current @ P1dB
Power Gain @ 1 dB Gain
Compression
Gain Flatness
3rd Order Intermod Distortion
P
out
SCL
[1]
I
DSQ
31.5 dBm 4.0 A
34.5 dBm 8.0 A
Saturated Drain Current
Pinch Off Voltage
I
DS
= 250 mA
I
DS
= 500 mA
Gate-Drain Breakdown
Voltage
I
GD
= -25 mA
I
GD
= -50 mA
Transconductance
I
DS
= 4.0 A
I
DS
= 8.0 A
Thermal Resistance
(Channel to Flange)
Temperature Rise Channel to
Flange; DC on and RF off
Case Style
IM6472-16L
Min.
Typ.
IM6472-32L
Min.
Typ.
Symbols
P1dB
Units
Max.
Max.
Test Conditions
dBm
dBm
%
41.5
42.5
44.5
45.0
31
η
ADD
37
I
DS
G1dB
A
dB
4.4
8.0
6.0
8.8
6.5
12.0
7.0
6.0
G
IMD
3
dB
±
0.3
±
0.5
±
0.3
±
0.5
dBc
dBc
A
-45
-42
-45
20.0
-42
28.0
I
DSS
V
P
6.0
10.0
14.0
12.0
V
V
-4.5
-3.0
-1.5
-4.5
-3.0
-1.5
BV
GDO
V
V
-16.0
-16.0
g
m
S
S
5.0
10.0
1.0
R
TH
oC/W
1.8
T
oC
72
80
C24A
Note:
1. SCL: Single Carrier Level
V
DS
= 10.0 V
Freq.= 6.4 – 7.2 GHz
Zs = Zl = 50 ohms
R
G
= 5
V
DS
= 10.0 V
Two Equal Tone Test
f
1
= 7.19 GHz
f
2
= 7.20 GHz
V
GS
= 0 V; V
DS
= 2.5 V
I. R. Method
I. R. Method; V
DS
= 10.0V
I
DS
= 4 and 8 A
V
DS
= 2.5 V
V
DS
= 2.5 V
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