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參數(shù)資料
| 型號： | IMB6A |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SO |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 30mA的一（c）|蘇 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 25K |
| 代理商： | IMB6A |
EMB6 / UMB6N / IMB6A
Transistors
General purpose (dual digital transistors)
EMB6 / UMB6N / IMB6A
z
Features
1) Two DTA144E chips in a EMT or UMT or SMT
package.
z
Equivalent circuit
EMB6 / UMB6N
(3)
(2)
R
1
R
2
R
2
R
1
IMB6A
(4)
(1)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
(6)
(3) (2)
(1)
(5)
z
Package, marking, and packaging specifications
Type
Package
Marking
Code
EMB6
EMT6
B6
T2R
8000
UMB6N
UMT6
B6
TR
3000
IMB6A
SMT6
B6
T110
3000
Basic ordering unit (pieces)
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Symbol
V
CC
V
IN
I
O
Pd
Tj
Tstg
Limits
50
40
10
50
300(TOTAL)
150
55
~
+
150
150(TOTAL)
IMB6A
EMB6 / UMB6N
Unit
V
V
mA
mW
1
2
°
C
°
C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
z
Electrical characteristics
(Ta = 25
°
C)
Parameter
z
External dimensions
(Units : mm)
ROHM : EMT6
EMB6
ROHM : UMT6
UMB6N
ROHM : SMT6
EIAJ : SC-74
IMB6A
0
1.2
1.6
(1)
(2)
(5)
(6)
(3)
(4)
0
0
0
0
1
1
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
Each lead has same dimensions
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Each lead has same dimensions
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
R
1
R
2
/
R
1
Min.
3.0
68
32.9
0.8
Typ.
0.1
47
1.0
250
Max.
0.5
0.3
0.18
0.5
61.1
1.2
Unit
Conditions
Input resistance
Resistance ratio
f
T
V
V
mA
μ
A
k
MHz
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=
2mA
I
O
=
10mA, I
I
=
0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
I
O
=
5mA, V
O
=
5V
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
Transition frequency of the device.
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
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