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參數(shù)資料
| 型號： | IMF5 |
| 英文描述： | Transistors |
| 中文描述： | 晶體管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | IMF5 |
UMF5N
Transistors
!
Electrical characteristic curves
Tr1
3/4
0
1
100
1000
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
C
C
(
1.4
1.0
1.2
0.4
0.6
0.8
0.2
V
CE
=2V
Pulsed
T2
°
C
T
°
C
T
4
°
C
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.2 DC current gain vs.
collector current
1
D
F
10
1000
100
Ta
=
125
°
C
Ta
=
40
°
C
Ta
=
25
°
C
V
CE
=
2V
Pulsed
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current (
Ι
)
1
C
C
(
10
1000
100
Ta=25
°
C
Pulsed
I
C
/I
B
=
50
I
C
/I
B
=
20
I
C
/I
B
=
10
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
ΙΙ
)
1
C
C
(
10
1000
100
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
125
°
C
I
C
/I
B
=
20
Pulsed
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
10
B
B
100
10000
1000
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
125
°
C
I
C
/I
B
=
20
Pulsed
1
10
100
1000
EMITTER CURRENT : I
E
(mA)
Fig.6 Gain bandwidth product
vs. emitter current
1
T
T
(
10
1000
100
V
CE
=
2V
Ta
=
25
°
C
Pulsed
1
10
100
0.1
10
100
1000
Ta
=
25
°
C
f
=
1MHz
I
E
=
0A
C
E
EMITTER TO BASE VOLTAGE : V
EB
(
V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cib
Cob
0.01
0.1
1
10
100
EMITTER CURRENT : V
CE
(V)
Fig.8 Safe operation area
0.001
T
C
(
0.01
10
0.1
1
Ta
=
25
°
C
Single Pulsed
DC
100ms
10ms1ms
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