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參數(shù)資料
| 型號： | IMT4-7 |
| 英文描述： | TRANSISTOR | BJT | PAIR | PNP | 120V V(BR)CEO | 50MA I(C) | SOT-26 |
| 中文描述： | 晶體管|晶體管|一對|進(jìn)步黨| 120伏特五（巴西）總裁| 50mA的一（c）|采用SOT - 26 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 60K |
| 代理商： | IMT4-7 |
Epitaxial Planar Die Construction
Complementary NPN Type Available
(IMX8)
Small Surface Mount Package
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
F
D
B C
H
K
B
2
B
1
E
1
C
2
E
2
C
1
KX7
Mechanical Data
Case: SOT-26, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KX7
Weight: 0.016 grams (approx.)
IMT4
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-26
Min
Dim
A
B
C
D
F
H
J
K
L
M
All Dimensions in mm
Max
Typ
0.35
0.50
0.38
1.50
1.70
1.60
2.70
3.00
2.80
0.95
0.55
2.90
3.10
3.00
0.013 0.10
0.05
1.00
1.30
1.10
0.35
0.55
0.40
0.10
0.20
0.15
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
IMT4
-120
-120
-5.0
-50
225
555
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
C/W
C
-55 to +150
N
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Notes:
1.Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-120
-120
-5.0
V
V
V
A
A
I
C
= -50 A
I
C
= -1.0mA
I
E
= -50 A
V
CB
= -100V
V
EB
= -4.0V
-0.5
-0.5
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
h
FE
180
820
-0.5
I
C
= -2.0mA, V
CE
= -6.0V
I
C
= -10mA, I
B
= -1.0mA
V
CE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
140
MHz
V
= -12V, I
E
= 2.0mA,
f = 100MHz
Device
IMT4-7
Packaging
SOT-26
Shipping
3000/Tape & Reel
Ordering Information
(Note 3)
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| IMT4-7-F | 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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