參數(shù)資料
型號(hào): IN74HCT244A
廠商: INTEGRAL JOINT STOCK COMPANY
英文描述: Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85
中文描述: 八路三態(tài)同相緩沖器/線路驅(qū)動(dòng)器/線接收器
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 65K
代理商: IN74HCT244A
IN74HCT244A
2
INTEGRAL
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
V
IN
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
V
V
OUT
DC Output Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
V
I
IN
DC Input Current, per Pin
±
20
±
35
±
75
mA
I
OUT
DC Output Current, per Pin
mA
I
CC
DC Supply Current, V
CC
and GND Pins
Power Dissipation in Still Air, Plastic DIP
**
SOIC Package
**
mA
P
D
750
500
mW
Tstg
Storage Temperature
-65 to +150
°
C
°
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
**
Derating - Plastic DIP: - 10 mW/
°
C from 65
°
to 125
°
C
SOIC Package: : - 7 mW/
°
C from 65
°
to 125
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-55
+125
°
C
t
r
, t
f
Input Rise and Fall Time (Figure 1)
0
500
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages
to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range GND
(V
IN
or
V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
). Unused
outputs must be left open.
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IN74HCT245ADW 制造商:IKSEMICON 制造商全稱(chēng):IK Semicon Co., Ltd 功能描述:Octal 3-State Noninverting Bus Transceiver High-Performance Silicon-Gate CMOS