參數(shù)資料
型號(hào): IPB085N06LG
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢ Power-Transistor
中文描述: 的OptiMOS㈢功率晶體管
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 445K
代理商: IPB085N06LG
IPB085N06L G IPP085N06L G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
2600
3500
pF
Output capacitance
C
oss
-
620
820
Reverse transfer capacitance
C
rss
-
150
225
Turn-on delay time
t
d(on)
-
10
15
ns
Rise time
t
r
-
19
28
Turn-off delay time
t
d(off)
-
53
80
Fall time
t
f
-
18
27
Gate Charge Characteristics
4)
Gate to source charge
Q
gs
-
10
13
nC
Gate charge at threshold
Q
g(th)
-
4
6
Gate to drain charge
Q
gd
-
26
39
Switching charge
Q
sw
-
32
47
Gate charge total
Q
g
-
78
104
Gate plateau voltage
V
plateau
-
3.8
-
V
Output charge
Q
oss
V
DD
=30 V,
V
GS
=0 V
-
24
32
Reverse Diode
Diode continous forward current
I
S
-
-
80
A
Diode pulse current
I
S,pulse
-
-
320
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
-
0.97
1.3
V
Reverse recovery time
t
rr
-
57
70
ns
Reverse recovery charge
Q
rr
-
70
90
nC
4)
See figure 16 for gate charge parameter definition
V
R
=30 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
V
DD
=30 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=2.3
V
DD
=30 V,
I
D
=80 A,
V
GS
=0 to 10 V
Rev. 1.01
page 3
2006-06-13
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