參數(shù)資料
型號: IPB25N06S3-25
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢-T Power-Transistor
中文描述: ㈢的OptiMOS - T的功率晶體管
文件頁數(shù): 2/8頁
文件大?。?/td> 167K
代理商: IPB25N06S3-25
IPB25N06S3-25
IPI25N06S3-25, IPP25N06S3-25
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
-
-
3.3
K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB
R
thJA
minimal footprint
-
-
62
6 cm
2
cooling area
5)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
55
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=20 μA
2.1
3.0
4.0
Zero gate voltage drain current
I
DSS
V
DS
=55 V,
V
GS
=0 V,
T
j
=25 °C
-
-
1
μA
V
DS
=55 V,
V
GS
=0 V,
T
j
=125 °C
2)
-
1
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=15 A
-
21.6
25.1
m
V
GS
=10 V,
I
D
=15 A,
SMD version
-
21.3
24.8
Values
Rev. 1.0
page 2
2006-04-03
相關(guān)PDF資料
PDF描述
IPI25N06S3-25 OptiMOS㈢-T Power-Transistor
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