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參數(shù)資料
| 型號： | IPB80P03P3L-04 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS-P Power-Transistor |
| 中文描述： | 的OptiMOS磷功率晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 230K |
| 代理商： | IPB80P03P3L-04 |
2004-03-04
Page 2
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
Target data sheet
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
0.5
0.75
K/W
Thermal resistance, junction - ambient, leaded
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
-
-
-
-
62
40
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250μA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-430μA
Zero gate voltage drain current
V
(BR)DSS
-30
-
-
V
V
GS(th)
-1
-1.5
-2
V
DS
=-30V,
V
GS
=0,
T
j
=25°C
V
DS
=-30V,
V
GS
=0,
T
j
=150°C
3)
Gate-source leakage current
I
DSS
-
-
-0.1
-10
-1
-100
μA
V
GS
=±
20V,
V
DS
=0
Drain-source on-state resistance
4)
I
GSS
-
±
10
±
100
nA
V
GS
=-4.5V,
I
D
=-50A
V
GS
=-4.5V,
I
D
=-50A, SMD version
Drain-source on-state resistance
4)
R
DS(on)
-
-
6.3
6
7.6
7.3
m
V
GS
=-10V,
I
D
=-80A
V
GS
=-10V,
I
D
=-80A, SMD version
R
DS(on)
-
-
3.5
3.2
4.3
4
1Current limited by bondwire ; with an
R
thJC
= 0.75K/W the chip is able to carry
I
D
= 171A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air; t
≤
10 sec.
3Defined by design. Not subject to production test.
4Diagrams are related to straight lead versions
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