參數(shù)資料
型號(hào): IPF13N03LA
廠商: INFINEON TECHNOLOGIES AG
英文描述: Flat / Ribbon Cable; Number of Conductors:26; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyvinylchloride (PVC); Approval Bodies:UL, CSA; Capacitance:50pF RoHS Compliant: Yes
中文描述: 的OptiMOS 2功率晶體管
文件頁數(shù): 3/9頁
文件大?。?/td> 223K
代理商: IPF13N03LA
IPF13N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
849
1129
pF
Output capacitance
C
oss
-
364
484
Reverse transfer capacitance
C
rss
-
58
87
Turn-on delay time
t
d(on)
-
6.6
9.9
ns
Rise time
t
r
-
7.5
11
Turn-off delay time
t
d(off)
-
18
28
Fall time
t
f
-
3.4
5.1
Gate Charge Characteristics
5)
Gate to source charge
Q
gs
-
2.9
3.9
nC
Gate charge at threshold
Q
g(th)
-
1.4
1.8
Gate to drain charge
Q
gd
-
2.2
3.2
Switching charge
Q
sw
-
3.7
5.3
Gate charge total
Q
g
-
7.0
9.3
Gate plateau voltage
V
plateau
-
3.4
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
6
8
nC
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
8
10
Reverse Diode
Diode continous forward current
I
S
-
-
30
A
Diode pulse current
I
S,pulse
-
-
210
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
-
0.9
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/μs
-
-
10
nC
5)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
V
DD
=15 V,
V
GS
=10 V,
I
D
=15 A,
R
G
=2.7
V
DD
=15 V,
I
D
=15 A,
V
GS
=0 to 5 V
Rev. 1.2
page 3
2003-12-19
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IPF13N03LA G 功能描述:MOSFET N-CH 25V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IPF13N03LAG 制造商:Infineon Technologies AG 功能描述:SP000017610_Power MOSFET
IPF2 制造商:Carlo Gavazzi 功能描述:
IP-FFT 功能描述:開發(fā)軟件 FFT/IFFT MegaCore RoHS:否 制造商:Atollic Inc. 產(chǎn)品:Compilers/Debuggers 用于:ARM7, ARM9, Cortex-A, Cortex-M, Cortex-R Processors