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參數(shù)資料
| 型號(hào)： | IPS5751 |
| 廠商： | International Rectifier |
| 英文描述： | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| 中文描述： | 充分保護(hù)高壓側(cè)功率MOSFET開關(guān) |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 227K |
| 代理商： | IPS5751 |
IPS5751/IPS5751S
4
WWW.IRF.COM
Functional Block Diagram
(All values are typical)
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 1
, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Tdon
Turn-on delay time
Tr1
Rise time to Vout = Vcc - 5V
Tr2
Rise time from the end of Tr1
to Vout = 90% of Vcc
dV/dt (on) Turn ON dV/dt
Eon
Turn ON energy
Tdoff
Turn-off delay time
Tf
Fall time to Vout = 10% of Vcc
dV/dt (off) Turn OFF dV/dt
Eoff
Turn OFF energy
Min.
—
—
Typ.
5
4
Max. Units Test Conditions
20
20
See figure 3
μ
s
—
—
—
—
—
—
—
65
3
2
65
8
5
0.75
150
6
—
150
20
10
—
V/
μ
s
mJ
V/
μ
s
mJ
μ
s
See figure 4
Symbol Parameter
Tsd+
Over-temp. positive going threshold
Tsd-
Over-temp. negative going threshold
I
sd
Over-current threshold
I
open load
Open load detection threshold
Treset
Minimum time to reset protections
Tdg Blanking time before considering Dg — 7 100
μ
s Part turned on with Vin =5V
Min.
—
—
22
0.3
—
Typ.
165
158
35
1
50
Max. Units Test Condition
s
—
See fig. 2
—
See fig. 2
50
A
See fig. 2
2
A
—
Vin = 0V
μ
s
o
C
o
C
Protection Characteristics
2.0 V
2.6 V
+
-
S
R
Q
Level
shift
driver
Charge
pump
35 A
Tj
158°C
VCC
IN
50V
Over
temperature
Over
current
VOUT
GND
DG
8 V
8 V
62 V
165°C
40
200 K
4.4 V
4.7 V
+
-
Under voltage
lock out
Open load
22 mV
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