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參數(shù)資料
| 型號(hào)： | IPS5751S |
| 廠商： | International Rectifier |
| 英文描述： | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| 中文描述： | 充分保護(hù)高壓側(cè)功率MOSFET開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 227K |
| 代理商： | IPS5751S |
IPS5751/IPS5751S
2
WWW.IRF.COM
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter
Rth 1
Thermal resistance junction to case
Rth 2
Thermal resistance junction to ambient
Rth 1
Thermal resistance with standard footprint
Rth 2
Thermal resistance with 1" square footprint
Rth 3
Thermal resistance junction to case
Min.
—
—
—
—
—
Typ.
2
55
60
35
5
Max. Units Test Conditions
—
—
—
—
—
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (TAmbient = 25
C unless otherwise specified).
Symbol Parameter
Vout
Maximum output voltage
Voffset
Maximum logic ground to load ground offset Vcc-45
Vin
Maximum Input voltage
Iin, max
Maximum IN current
Vdg
Maximum diagnostic output voltage
Idg, max
Maximum diagnostic output current
Isd
cont.
(Rth=60
o
C/W) IPS5751
(Rth=80
o
C/W) IPS5751S
Isd
pulsed
Diode max. pulsed current
(1)
ESD1
Electrostatic discharge voltage
(Human Body)
Min.
Vcc-45
Max.
Vcc+0.3
Vcc+0.3
5.5
Units
Test Conditions
-0.3
-5
10
mA
-0.3
5.5
V
-1
10
mA
Diode max. continuous current
(1)
—
2.8
—
2.2
—
45
—
4
C=100pF, R=1500
,
C=200pF, R=0
,
L=10
μ
H
ESD2
Electrostatic discharge voltage
(Machine Model)
Maximum power dissipation
(1)
(Rth=60
o
C/W) IPS5751
(Rth=80
o
C/W) IPS5751S
—
0.5
Pd
—
2
—
1.56
Tj max.
Tlead
Vcc max. Maximum Vcc voltage
Max. storage & operating junction temp.
-40
+150
Lead temperature (soldering 10 seconds)
—
300
—
45
V
V
A
kV
W
o
C
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