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參數(shù)資料
| 型號： | IPU12N03L |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | DDM43W2S |
| 中文描述： | 的OptiMOS降壓轉(zhuǎn)換器系列 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 152K |
| 代理商： | IPU12N03L |
2003-01-17
Page 3
IPD12N03L
IPU12N03L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=30A
23.8
47.5
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
1160
1550
pF
Output capacitance
C
oss
-
450
605
Reverse transfer capacitance
C
rss
-
120
175
Gate resistance
R
G
-
1.2
-
Turn-on delay time
t
d(on)
V
DD
=15V,
V
GS
=10V,
I
D
=15A,
R
G
=5.6
-
6.1
9.2
ns
Rise time
t
r
-
13
20
Turn-off delay time
t
d(off)
-
29.4
44.1
Fall time
t
f
-
17.3
26
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=15V,
I
D
=15A
-
3
3.8
nC
Gate to drain charge
Q
gd
-
10.3
12.9
Gate charge total
Q
g
V
DD
=15V,
I
D
=15A,
V
GS
=0 to 5V
-
18.2
22.8
Output charge
Q
oss
V
DS
=15V,
I
D
=15A,
V
GS
=0V
-
16.5
20.6
nC
Gate plateau voltage
V
(plateau)
V
DD
=15V,
I
D
=15A
-
2.7
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
30
A
Inv. diode direct current, pulsed
I
SM
-
-
120
Inverse diode forward voltage
V
SD
V
GS
=0V,
I
F
=30A
-
0.9
1.2
V
Reverse recovery time
t
rr
V
R
=-V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
-
31
39
ns
Reverse recovery charge
Q
rr
-
29
37
nC
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