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參數(shù)資料
| 型號： | IR2110L6 |
| 廠商： | International Rectifier |
| 英文描述： | INTELLIGENT DISP 4CHAR 5X7 HERED |
| 中文描述： | 高端和低端驅(qū)動 |
| 文件頁數(shù)： | 3/18頁 |
| 文件大?。?/td> | 328K |
| 代理商： | IR2110L6 |
www.irf.com
3
IR2110(
-
1
-
2)(S)PbF/IR2113(
-
1
-
2)(S)PbF
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay
7
—
120
150
V
S
= 0V
t
off
Turn-off propagation delay
8
—
94
125
V
S
= 500V/600V
t
sd
Shutdown propagation delay
9
—
110
140
V
S
= 500V/600V
t
r
Turn-on rise time
10
—
25
35
t
f
Turn-off fall time
11
—
17
25
MT
Delay matching, HS & LS (IR2110)
—
—
—
10
turn-on/off
(IR2113)
—
—
—
20
ns
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, C
L
= 1000 pF, T
A
= 25
°
C and V
SS
= COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage
12
9.5
—
—
V
IL
Logic “0” input voltage
13
—
—
6.0
V
OH
High level output voltage, V
BIAS
- V
O
14
—
—
1.2
I
O
= 0A
V
OL
Low level output voltage, V
O
15
—
—
0.1
I
O
= 0A
I
LK
Offset supply leakage current
16
—
—
50
V
B
=V
S
= 500V/600V
I
QBS
Quiescent V
BS
supply current
17
—
125
230
V
IN
= 0V or V
DD
I
QCC
Quiescent V
CC
supply current
18
—
180
340
V
IN
= 0V or V
DD
I
QDD
Quiescent V
DD
supply current
19
—
15
30
V
IN
= 0V or V
DD
I
IN+
Logic “1” input bias current
20
—
20
40
V
IN
= V
DD
I
IN-
Logic “0” input bias current
21
—
—
1.0
V
IN
= 0V
V
BSUV+
V
BS
supply undervoltage positive going
22
7.5
8.6
9.7
threshold
V
BSUV-
V
BS
supply undervoltage negative going
23
7.0
8.2
9.4
threshold
V
CCUV+
V
CC
supply undervoltage positive going
24
7.4
8.5
9.6
threshold
V
CCUV-
V
CC
supply undervoltage negative going
25
7.0
8.2
9.4
threshold
I
O+
Output high short circuit pulsed current
26
2.0
2.5
—
V
O
= 0V, V
IN
= V
DD
PW
≤
10
μ
s
I
O-
Output low short circuit pulsed current
27
2.0
2.5
—
V
O
= 15V, V
IN
= 0V
PW
≤
10
μ
s
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, T
A
= 25
°
C and V
SS
= COM
unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters
are referenced to V
SS
and are applicable to all three logic input leads: HIN, LIN and SD. The V
O
and I
O
parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
V
μ
A
V
A
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| IR2110PBF | 功能描述:功率驅(qū)動器IC Hi&Lw Sd Drvr All HiVlt Pins 1 Sd RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2110S | 功能描述:IC DRIVER HIGH/LOW SIDE 16-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| IR2110SHR | 制造商:International Rectifier 功能描述:MOSFET DRVR 500V 2.5A DUAL HI/LO SIDE NON-INV 16SOIC W - Rail/Tube |
| IR2110SPBF | 功能描述:功率驅(qū)動器IC HI LO SIDE DRVR 500V 2A 10ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2110STR | 功能描述:IC DRIVER HIGH/LOW SIDE 16-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
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