參數(shù)資料
型號(hào)： IR2113SPBF
廠商： International Rectifier
英文描述： HIGH AND LOW SIDE DRIVER
中文描述： 高端和低端驅(qū)動(dòng)
文件頁數(shù)： 3/18頁
文件大小： 328K
代理商： IR2113SPBF
www.irf.com
3
IR2110(
-
1
-
2)(S)PbF/IR2113(
-
1
-
2)(S)PbF
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay
7
—
120
150
V
S
= 0V
t
off
Turn-off propagation delay
8
—
94
125
V
S
= 500V/600V
t
sd
Shutdown propagation delay
9
—
110
140
V
S
= 500V/600V
t
r
Turn-on rise time
10
—
25
35
t
f
Turn-off fall time
11
—
17
25
MT
Delay matching, HS & LS (IR2110)
—
—
—
10
turn-on/off
(IR2113)
—
—
—
20
ns
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, C
L
= 1000 pF, T
A
= 25
°
C and V
SS
= COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage
12
9.5
—
—
V
IL
Logic “0” input voltage
13
—
—
6.0
V
OH
High level output voltage, V
BIAS
- V
O
14
—
—
1.2
I
O
= 0A
V
OL
Low level output voltage, V
O
15
—
—
0.1
I
O
= 0A
I
LK
Offset supply leakage current
16
—
—
50
V
B
=V
S
= 500V/600V
I
QBS
Quiescent V
BS
supply current
17
—
125
230
V
IN
= 0V or V
DD
I
QCC
Quiescent V
CC
supply current
18
—
180
340
V
IN
= 0V or V
DD
I
QDD
Quiescent V
DD
supply current
19
—
15
30
V
IN
= 0V or V
DD
I
IN+
Logic “1” input bias current
20
—
20
40
V
IN
= V
DD
I
IN-
Logic “0” input bias current
21
—
—
1.0
V
IN
= 0V
V
BSUV+
V
BS
supply undervoltage positive going
22
7.5
8.6
9.7
threshold
V
BSUV-
V
BS
supply undervoltage negative going
23
7.0
8.2
9.4
threshold
V
CCUV+
V
CC
supply undervoltage positive going
24
7.4
8.5
9.6
threshold
V
CCUV-
V
CC
supply undervoltage negative going
25
7.0
8.2
9.4
threshold
I
O+
Output high short circuit pulsed current
26
2.0
2.5
—
V
O
= 0V, V
IN
= V
DD
PW
≤
10
μ
s
I
O-
Output low short circuit pulsed current
27
2.0
2.5
—
V
O
= 15V, V
IN
= 0V
PW
≤
10
μ
s
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, T
A
= 25
°
C and V
SS
= COM
unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters
are referenced to V
SS
and are applicable to all three logic input leads: HIN, LIN and SD. The V
O
and I
O
parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
V
μ
A
V
A
相關(guān)PDF資料
PDF描述
IR2110L6 INTELLIGENT DISP 4CHAR 5X7 HERED
IR2110 HIGH AND LOW SIDE DRIVER
IR2110E4 HIGH AND LOW SIDE DRIVER
IR2110E6 HIGH AND LOW SIDE DRIVER
IR2110PBF HIGH AND LOW SIDE DRIVER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IR2113STR 功能描述:IC MOSFET DRVR HI/LO SIDE 16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件
IR2113STRPBF 功能描述:功率驅(qū)動(dòng)器IC Hi&Lw Sd Drvr All HiVlt Pins 1 Sd RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IR21141SSPBF 功能描述:功率驅(qū)動(dòng)器IC 600V HALF BRDG DRVR IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IR21141SSPBF_09 制造商:IRF 制造商全稱:International Rectifier 功能描述:HALF-BRIDGE GATE DRIVER IC
IR21141SSTRPBF 功能描述:功率驅(qū)動(dòng)器IC 600V Hlf Brdg Drvr IC for Pwr Swtch App RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*