參數(shù)資料
型號(hào)： IR2153S
廠商： International Rectifier
英文描述： SELF-OSCILLATING HALF-BRIDGE DRIVER
中文描述： 自激式半橋驅(qū)動(dòng)器
文件頁數(shù)： 2/9頁
文件大?。?/td> 217K
代理商： IR2153S
IR2153(D)(S) & (PbF)
2
www.irf.com
Note 1:
This IC contains a zener clamp structure between the chip V
CC
and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V
CLAMP
specified in the Electrical Characteristics section.
Note 2:
Care should be taken to avoid output switching conditions where the V
S
node flies inductively below ground by
more than 5V.
Note 3:
Enough current should be supplied to the V
CC
pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition
Min.
Max.
Units
V
B
s
High side floating supply voltage
V
CC
- 0.7
V
CLAMP
V
S
Steady state high side floating supply offset voltage
-3.0 (note 2)
600
V
CC
Supply voltage
10
V
CLAMP
I
CC
Supply current
(note 3)
5
mA
T
J
Junction temperature
-40
125
°
C
V
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition
Min.
Max.
Units
V
B
High side floating supply voltage
-0.3
625
V
S
High side floating supply offset voltage
V
B
- 25
V
B
+ 0.3
V
HO
High side floating output voltage
V
S
- 0.3
V
B
+ 0.3
V
LO
Low side output voltage
-0.3
V
CC
+ 0.3
V
RT
R
T
pin voltage
-0.3
V
CC
+ 0.3
V
CT
C
T
pin voltage
-0.3
V
CC
+ 0.3
I
CC
Supply current (note 1)
—
25
I
RT
R
T
pin current
-5
5
dV
s
/dt
Allowable offset voltage slew rate
-50
50
V/ns
P
D
Maximum power dissipation @ T
A
≤
+25
°
C
(8 Lead DIP)
—
1.0
(8 Lead SOIC)
—
0.625
Rth
JA
Thermal resistance, junction to ambient
(8 Lead DIP)
—
125
(8 Lead SOIC)
—
200
T
J
Junction temperature
-55
150
T
S
Storage temperature
-55
150
°
C
T
L
Lead temperature (soldering, 10 seconds)
—
300
V
°
C/W
W
mA
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