參數(shù)資料
型號(hào)： IR21571S
廠(chǎng)商： International Rectifier
英文描述： FULLY INTEGRATED BALLAST CONTROL IC
中文描述： 完全集成的鎮(zhèn)流器控制IC
文件頁(yè)數(shù)： 16/17頁(yè)
文件大?。?/td> 234K
代理商： IR21571S
IR21571
(S)
16
www.irf.com
power supply to the upper gate driver CMOS circuitry.
Since the quiescent current in this CMOS circuitry is
very low (typically 45
μ
A in the on-state), the majority
of the drop in the V
BS
voltage when Q1 is on occurs
due to the transfer of charge from the bootstrap
capacitor to the gate of the power MOSFET.
VB should be bypassed to VS as close as possible to
the leads of the IC with a low ESR/ESL capacitor. A
PCB layout example is shown in figure 20. A rule of
thumb for the value of this capacitor is to keep its
minimum value at least 50 times the value of the total
input capacitance (Ciss) of the MOSFET or IGBT being
driven. In addition, the VS lead should be connected
directly to the high side power MOSFET source.
Figure 20: Supply bypassing PCB layout example
Figure 19: Typical bootstrap supply connection
with V
CC
charge pump from half-bridge output
(shaded area)
A high voltage, fast recovery diode D
BOOT
(the so-
called bootstrap diode) is connected between V
CC
(anode) and VB (cathode), and a capacitor C
BOOT
(the so-called bootstrap capacitor) is connected
between the VB and VS leads. During half-bridge
switching, when MOSFET Q2 is on and Q1 is off, the
bootstrap capacitor C
BOOT
is charged from the V
CC
decoupling capacitor, through the bootstrap diode
D
BOOT
, and through Q2. Alternately, when Q2 is off
and Q1 is on, the bootstrap diode is reverse-biased,
and the bootstrap capacitor (which ‘ floats’ on the
source of the upper power MOSFET) serves as the
rectifie
d
AC line
1
/
2
Bridge
output
C
VCC
R
SUPPLY
D1
D2
Q2
Q1
C
SNUBBER
V
BUS
return
+V
BUS
D
BOOT
C
BOOT
R
CS
R3
R
GLS
R
GHS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
I
VDC
CPH
RPH
RT
RUN
CT
DT
OC
LO
COM
VCC
VB
VS
HO
SD
CS
C
VCC
(surface mount)
D
Boot
(surface mount)
C
BOOT
(surface mount)
C
VCC
(through hole)
pin 1
IR21571
相關(guān)PDF資料
PDF描述
IR21571 FULLY INTEGRATED BALLAST CONTROL IC
IR21593 DIMMING BALLAST CONTROL IC
IR21593S DIMMING BALLAST CONTROL IC
IR21592 DIMMING BALLAST CONTROL IC
IR21592S DIMMING BALLAST CONTROL IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IR21571SPBF 功能描述:功率驅(qū)動(dòng)器IC BALLAST CTRL BELO 600V 15.6V VCC 150uA RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IR21571STR 功能描述:IC BALLAST CONTROL INTEG 16-SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - 照明，鎮(zhèn)流器控制器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:2,500 系列:- 類(lèi)型:CCFL 控制器 頻率:40 ~ 80 kHz 電流 - 電源:5mA 電流 - 輸出:- 電源電壓:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC 包裝:帶卷 (TR) 其它名稱(chēng):90-3991V+V01
IR21571STRPBF 功能描述:功率驅(qū)動(dòng)器IC Ballast Cntrl Thrml Ovrload Prot RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IR2157S 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Ballast Control. Below Resonance Protection. Thermal Overload Protection. Protection from Failure to Strike. Programmable Preheat Time and Run Frequency. Programmable Deadtime in a 16-lead SOIC Narrow package
IR2159 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:DIMMING BALLAST CONTROL IC
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*