參數(shù)資料
型號： IR2159
文件頁數(shù)： 1/6頁
文件大?。?/td> 94K
代理商： IR2159
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
Programmable oscillator frequency
f
=
+
1
1.4 (R
75 ) C
T
T
Matched propagation delay for both channels
Low side output in phase with R
T
Description
The IR2151 is a high voltage, high speed, self-os-
cillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The front
end features a programmable oscillator which is simi-
lar to the 555 timer. The output drivers feature a high
pulse current buffer stage and an internal deadtime
designed for minimum driver cross-conduction. Propa-
gation delays for the two channels are matched to sim-
plify use in 50% duty cycle applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration that
operates off a high voltage rail up to 600 volts.
Typical Connection
Preliminary Data Sheet No. PD60034-
J
IR2151
(NOTE: For new designs, we
recommend IR’s new products IR2153 and IR21531)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
Duty Cycle
50%
I
O
+/-
100 mA / 210 mA
V
OUT
10 - 20V
Deadtime (typ.)
1.2 μs
Packages
1
8 Lead PDIP
8 Lead SOIC
up to 600V
V
CC
R
T
C
T
V
B
HO
V
S
LO
COM
TO
LOAD
(Refer to Lead Assignment diagram for correct pin configuration)
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