參數(shù)資料
型號: IR2214
廠商: International Rectifier
英文描述: HALF-BRIDGE GATE DRIVER IC
中文描述: 半橋柵極驅動IC
文件頁數(shù): 22/28頁
文件大?。?/td> 308K
代理商: IR2214
22
IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
The minimum size of bootstrap capacitor is:
An example follows:
a) using a 25A @ 125C IGBT (IRGP30B120KD):
I
QBS
= 800
μ
A (See Static Electrical Charact.);
I
LK
= 50
μ
A (See Static Electrical Charact.);
Q
LS
= 20 nC;
Q
G
= 160 nC (Datasheet IRGP30B120KD);
I
LK_GE
= 100 nA (Datasheet IRGP30B120KD);
I
LK_DIODE
= 100
μ
A (with reverse recovery
time <100 ns);
I
LK_CAP
= 0 (neglected for ceramic capacitor);
I
DS-
= 150
μ
A (see Static Electrical Charact.);
T
HON
= 100
μ
s.
And:
V
CC
= 15 V
V
F
= 1 V
V
CEonmax
= 3.1 V
V
GEmin
= 10.5 V
the maximum voltage drop
V
BS
becomes
F
CC
BS
V
V
V
V
V
10
1
15
=
and the boodstrap capacitor is:
BS
TOT
V
BOOT
Q
C
=
min
=
V
CEon
V
=
GE
V
V
min
1
V
4
5
nF
V
nC
C
BOOT
725
4
290
=
NOTICE:
Here above
V
CC
has been cho-
sen to be 15V. Some IGBTs may require
higher supply to work correctly with the boot-
strap technique. Also Vcc variations must be
accounted in the above formulas.
Some important considerations
a.
Voltage ripple
There are three different cases making the boot-
strap circuit gets conductive (see figure 19):
side IGBT displaying relevant V
CEon
I
< 0; the load current flows in the low
In this case we have the lowest value for V
.
This represents the worst case for the bootstrap
capacitor sizing. When the IGBT is turned off
the Vs node is pushed up by the load current
until the high side freewheeling diode get for-
warded biased
I
= 0; the IGBT is not loaded while be-
ing on and V
CE
can be neglected
freewheeling diode
I
> 0; the load current flows through the
In this case we have the highest value for V
.
Turning on the high side IGBT, I
LOAD
flows into
it and V
S
is pulled up.
To minimize the risk of undervoltage, bootstrap
capacitor should be sized according to the
I
LOAD
<0 case.
CEon
V
F
CC
BS
V
V
V
=
F
CC
BS
V
V
V
=
FP
F
CC
BS
V
V
V
V
+
=
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