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參數(shù)資料
| 型號(hào)： | IR2214SS |
| 廠商： | International Rectifier |
| 英文描述： | HALF-BRIDGE GATE DRIVER IC |
| 中文描述： | 半橋柵極驅(qū)動(dòng)IC |
| 文件頁(yè)數(shù)： | 26/28頁(yè) |
| 文件大?。?/td> | 308K |
| 代理商： | IR2214SS |
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IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
PCB LAYOUT TIPS
Distance from H to L voltage
:
The IR2214 pin out maximizes the distance be-
tween floating (from DC- to DC+) and low voltage
pins. It’s strongly recommended to place com-
ponents tied to floating voltage in the high volt-
age side of device (V
, V
side) while the other
components in the opposite side.
Ground plane:
Ground plane must not be placed under or
nearby the high voltage floating side to minimize
noise coupling.
Gate drive loops:
Current loops behave like an antenna able to re-
ceive and transmit EM noise. In order to reduce
EM coupling and improve the power switch turn
on/off performances, gate drive loops must be
reduced as much as possible. Figure 23 shows
the high and low side gate loops.
Moreover, current can be injected inside the gate
drive loop via the IGBT collector-to-gate parasitic
capacitance. The parasitic auto-inductance of the
gate loop contributes to develop a voltage across
the gate-emitter increasing the possibility of self
turn-on effect. For this reason is strongly recom-
mended to place the three gate resistances close
together and to minimize the loop
area (see figure 23).
gate
resistance
VS/COM
VB/ VCC
H/LOP
H/LON
SSDH/L
V
GE
Gate Drive
Loop
C
GC
I
GC
Figure 23
: gate drive loop
Supply capacitors:
IR2214 output stages are able to quickly turn on
IGBT with up to 2 A of output current. The sup-
ply capacitors must be placed as close as pos-
sible to the device pins (V
and V
for the
ground tied supply, V
and V
for the floating
supply) in order to minimize parasitic inductance/
resistance.
Routing and placement example:
Figure 24 shows one of the possible layout solu-
tions using a 3 layer PCB. This example takes
into account all the previous considerations.
Placement and routing for supply capacitors and
gate resistances in the high and low voltage side
minimize respectively supply path and gate drive
loop. The bootstrap diode is placed under the
device to have the cathode as close as possible
to bootstrap capacitor and the anode far from
high voltage and close to V
CC
.
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| IR2233J | 功能描述:IC DRIVER 3-PHASE BRIDGE 44-PLCC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
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