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參數(shù)資料
| 型號(hào)： | IR250SG12HCB |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 17K |
| 代理商： | IR250SG12HCB |
1
www.irf.com
Junction Size:
Square 250 mils
Wafer Size:
4"
V
RRM
Class:
1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
n. a.
PHASE CONTROL THYRISTORS
IR250SG12HCB
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
Maximum On-state Voltage
1.3 V
T
J
= 25°C, I
T
= 25 A
V
RRM
Reverse Breakdown Voltage
1200 V
T
J
= 25°C, I
RRM
= 100 μA
(1)
I
GT
Max. Required DC Gate Current to Trigger
100 mA
T
J
= 25° C, anode supply = 6 V, resistive oad
V
GT
Max. Required DC Gate Voltage to Trigger
2 V
T
J
= 25° C, anode supply = 6 V, resistive load
I
H
Holding Current Range
5 to 200 mA
Anode supply = 6 V, resistive load
I
L
Maximum Latching Current
400 mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Chip Dimensions
250 x 250 mils (see drawing)
Wafer Diameter
100 mm, with std. <110> flat
Wafer Thickness
370 μm ± 10 μm
Maximum Width of Sawing Line
130 μm
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Bulletin I0210J 12/98
(1)
Nitrogen flow on die edge.
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