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參數(shù)資料
| 型號(hào)： | IRF1205 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | IRF1205 |
IRF1205
2
www.irf.com
PROVISIONAL
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
=25A, V
GS
= 0V
T
J
= 25°C, I
F
= 25A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
63
140
1.3
94
210
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
41
164
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
V
DD=
25V
,
Starting T
J
= 25°C, L = 610μH
R
G
= 25
, I
AS
= 25A
I
SD
≤
25A, di/dt
≤
220A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Use IRFR/U1205 Data and Test conditons.
Pulse width
≤
300μs; duty cycle
≤
2%
Calculated continuous current based on maximum allowable junction
temperature: Package limitation current = 20A
Min. Typ. Max. Units
55
–––
–––
0.05
–––
––– 0.027
2.0
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.9
–––
44
–––
34
–––
35
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 25A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 25A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 25A
R
G
= 9.1
R
D
= 1.1
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
–––
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
50
10
21
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1200 –––
390
140
–––
–––
pF
nH
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
S
D
G
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