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參數(shù)資料
| 型號(hào)： | IRF130 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET |
| 中文描述： | 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 147K |
| 代理商： | IRF130 |
IRF130
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJA
Junction to Case
Junction to Ambient
—
—
—
— 30
1.67
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
14
56
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.5
300
3.0
V
nS
μC
T
j
= 25°C, IS = 14A, VGS = 0V
Tj = 25°C, IF = 14A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.13
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
4.6
—
—
—
— 0.21
VGS = 10V, ID =14A
— 4.0 V VDS = VGS, ID =250μA
—
—
S (
)
—
25
—
250
μ
A
0.18
VGS = 10V, ID = 9.0A
VGS(th)
gfs
IDSS
VDS > 15V, IDS = 9.0A
VDS=80V, VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID=14A
VDS = 50V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
12
2.5
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
35
10
15
35
80
60
45
—
nC
VDD =50V, ID =14A,
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
650
250
44
VGS = 0V, VDS = 25V
f = 1.0MHz
—
—
pF
nA
nH
n s
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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| IRF1302S | 功能描述:MOSFET N-CH 20V 174A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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