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參數(shù)資料
| 型號(hào)： | IRF1405S |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 5.3mohm，身份證\u003d 131A章） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 154K |
| 代理商： | IRF1405S |
Parameter
Max.
131
93
680
200
1.3
± 20
590
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
HEXFET
Power MOSFET
Stripe Planar design of HEXFET
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
S
D
G
V
DSS
= 55V
R
DS(on)
= 5.3m
I
D
= 131A
Description
1/11/01
www.irf.com
1
AUTOMOTIVE MOSFET
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
D
2
Pak
IRF1405S
TO-262
IRF1405L
PD -93992
IRF1405S
IRF1405L
G
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
G
G
G
G
Benefits
Typical Applications
Electric Power Steering (EPS)
Anti-lock Braking System (ABS)
Wiper Control
Climate Control
Power Door
G
G
G
G
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF1405PBF | AUTOMOTIVE MOSFET |
| IRF1405ZL-7PPBF | HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 120A ) |
| IRF1405ZS-7PPBF | HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 120A ) |
| IRF1405Z | AUTOMOTIVE MOSFET |
| IRF1405ZL | AUTOMOTIVE MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1405SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK |
| IRF1405SPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1405STRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 131A I(D) | TO-263AB |
| IRF1405STRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 131A 3PIN D2PAK - Tape and Reel |
| IRF1405STRLPBF | 功能描述:MOSFET MOSFT 55V 131A 5.3mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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