參數(shù)資料
型號(hào)： IRF150
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： N-CHANNEL POWER MOSFETS
中文描述： N溝道功率MOSFET
文件頁(yè)數(shù)： 1/7頁(yè)
文件大小： 150K
代理商： IRF150
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
38
24
152
150
1.2
±20
150
38
15
5.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
PD - 90337G
o
C
A
08/21/01
www.irf.com
1
Product Summary
Part Number B
VDSS
R
DS(on)
I
D
IRF150 100V 0.055
38A
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-204AA/AE)
[REF:MIL-PRF-19500/543]
100V, N-CHANNEL
IRF150
TRANSISTORS
JANTX2N6764
JANTXV2N6764
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
TO-3
相關(guān)PDF資料
PDF描述
IRF150 HIGH VOLTAGE POWER MOSFET DIE
IRF150 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRF150 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
IRF150-153 N-Channel Power MOSFETs, 40 A, 60 V/100 V
IRF150 N-Channel Power MOSFETs, 40 A, 60 V/100 V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF150-153 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 40 A, 60 V/100 V
IRF1503 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET
IRF1503L 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRF1503LPBF 功能描述:MOSFET N-CH 30V 75A TO-262 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF1503PBF 功能描述:MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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