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參數(shù)資料
| 型號(hào)： | IRF250 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | N-CHANNEL POWER MOSFETS |
| 中文描述： | N溝道功率MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | IRF250 |
IRF250
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
39.95 (1.573)
max.
17.15 (0.675)
16.64 (0.655)
30.40 (1.197)
30.15 (1.187)
2
m
1
1
1
2
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
20.32 (0.800)
18.80 (0.740)
dia.
7
6
1
1
1
1
1.57 (0.062)
1.47 (0.058)
dia.
2 plcs.
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
2
Repetitive Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
±20V
30A
19A
120A
150W
1.2W/°C
200mJ
30A
15mJ
5V/ns
–55 to +150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
FEATURES
HERMETICALLY SEALED TO–3 METAL
PACKAGE
SIMPLE DRIVE REQUIREMENTS
SCREENING OPTIONS AVAILABLE
TO–3 Metal Package
Pin 2 – Source
Pin 1 – Gate
Case – Drain
Notes
1) Pulse Test: Pulse Width
≤
300μs,
δ ≤
2%.
2) @ V
DD
= 50V , L
≥
330mH , R
G
= 25
, Peak I
L
= 30A , Starting T
J
= 25°C.
3) @ I
SD
≤
30A , di/dt
≤
190A/μs , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 2.35
V
DSS
I
D(cont)
R
DS(on)
200V
30A
0.085
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