參數(shù)資料
型號: IRF2804
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 3/12頁
文件大?。?/td> 771K
代理商: IRF2804
www.irf.com
3
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID
4.5V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
ID
(
)
TJ = 25°C
TJ = 175°C
VDS = 10V
20μs PULSE WIDTH
0
40
80
120
160
200
ID, Drain-to-Source Current (A)
0
50
100
150
200
250
300
Gf
TJ = 25°C
TJ = 175°C
VDS = 10V
20μs PULSE WIDTH
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
ID
4.5V
20μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
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