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參數(shù)資料
| 型號(hào)： | IRF3205ZSTRLPBF |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 379K |
| 代理商： | IRF3205ZSTRLPBF |
07/23/10
www.irf.com
1
HEXFET Power MOSFET
VDSS = 55V
RDS(on) = 6.5m
ID = 75A
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating.Thesefeaturescombine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
S
D
G
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Features
IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
D2Pak
IRF3205ZSPbF
TO-220AB
IRF3205ZPbF
TO-262
IRF3205ZLPbF
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.90
°C/W
RθCS
Case-to-Sink, Flat Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
250
180
See Fig.12a, 12b, 15, 16
170
1.1
± 20
Max.
110
78
440
75
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
l
Lead-Free
PD - 95129A
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相關(guān)代理商/技術(shù)參數(shù) |
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| IRF3205ZSTRR | 功能描述:MOSFET N-CH 55V 75A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF3205ZSTRRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF320LSPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF321 | 制造商:International Rectifier 功能描述: |
| IRF322 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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