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參數(shù)資料
| 型號： | IRF3710SPBF |
| 廠商： | International Rectifier |
| 英文描述： | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; Pins: 144; Temp.: AUTO |
| 中文描述： | ㈢的HEXFET功率MOSFET（減振鋼板基本\u003d 100V的，的RDS（on）\u003d 2300ヘ，身份證\u003d 57A條） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 283K |
| 代理商： | IRF3710SPBF |
IRF3710SPbF
IRF3710LPbF
HEXFET
Power MOSFET
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted,steady-state)**
Thermal Resistance
www.irf.com
1
V
DSS
= 100V
R
DS(on)
= 23m
I
D
= 57A
S
D
G
Advanced HEXFET
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
57
40
180
200
1.3
± 20
28
20
5.8
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
PD - 95108
D
2
Pak
IRF3710SPbF
TO-262
IRF3710LPbF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF3710STRL | 制造商:International Rectifier 功能描述: |
| IRF3710STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 57A 3PIN D2PAK - Tape and Reel |
| IRF3710STRLPBF | 功能描述:MOSFET MOSFT 100V 57A 23mOhm 86.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3710STRLPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF3710STRR | 功能描述:MOSFET N-CH 100V 57A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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