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參數(shù)資料
| 型號： | IRF3805S-7P |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 648K |
| 代理商： | IRF3805S-7P |
IRF3805S-7P
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 2.6m
I
D
= 160A
www.irf.com
1
AUTOMOTIVE MOSFET
HEXFET
is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
PD - 96904A
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Max.
240
170
160
1000
300
10 lbfin (1.1Nm)
2.0
± 20
440
680
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF3805S-7PHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 240A 7-Pin(6+Tab) D2PAK |
| IRF3805S-7PPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 2.6mOhms 49nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3805SPBF | 功能描述:MOSFET 30V 1 N-CH 3.3mOhm HEXFET 75A ID RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3805STRL | 制造商:International Rectifier 功能描述:MOSFET, 55V, 220A, 3.3 mOhm, 190 nC Qg, D2-Pak |
| IRF3805STRL-7PP | 功能描述:MOSFET MOSFT 55V 240A 2.6mOhm 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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