- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377504 > IRF530L (International Rectifier) Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF530L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d0.11Ω的，身份證\u003d 17A條） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 178K |
| 代理商： | IRF530L |
IRF530NS/L
HEXFET
Power MOSFET
PD - 91352A
l
Advanced Process Technology
l
Surface Mount (IRF530NS)
l
Low-profile through-hole (IRF530NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
Description
V
DSS
=100V
R
DS(on)
= 0.11
I
D
= 17A
D2
TO-262
Parameter
Typ.
–––
–––
Max.
1.9
40
Units
R
θ
JC
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
17
12
60
3.8
79
0.53
± 20
150
A
7.9
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current9.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
mJ
V/ns
-55 to + 175
300 (1.6mm from case )
°C
S
D
G
5/13/98
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF530FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| IRF530 | N-CHANNEL POWER MOSFETS |
| IRF530 | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF530R | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF530PBF | Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF530N | 制造商:International Rectifier 功能描述:MOSFET N TO-220 |
| IRF530N,127 | 功能描述:MOSFET N-CH 100V 17A TO-220AB RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF530N_R4942 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF530ND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) | CHIP |
| IRF530NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 17A 3PIN TO-220AB - Rail/Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。