參數(shù)資料
型號(hào): IRF530R
廠商: Harris Corporation
英文描述: N-Channel Power MOSFETs Avalanche Energy Rated
中文描述: N溝道功率MOSFET額定雪崩能量
文件頁數(shù): 3/10頁
文件大?。?/td> 178K
代理商: IRF530R
IRF530NS/L
www.irf.com
3
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
1
10
100
0.1
1
10
100
I
D
VDS
VGS
20μs PULSE WIDTH
T = 25°C
A
4.5V
1
10
100
0.1
1
10
100
4.5V
I
D
VDS
VGS
A
20μs PULSE W IDTH
T = 175°C
1
10
100
4
5
6
7
8
9
10
T = 25°C
J
V , Gate-to-Source Voltage (V)
D
I
V = 50V
20μs PULSE W IDTH
T = 175°C
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60
-40
-20
T , Junction Temperature (°C)
0
20
40
60
80
100 120 140 160 180
R
D
(
V = 10V
A
I = 15A
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IRF530SPBF 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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