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參數(shù)資料
| 型號： | IRF620N |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 179K |
| 代理商： | IRF620N |
IRF630N/NS/NL
Power MOSFET
V
DSS =
200V, R
DS(on)
= 0.30 ohm, I
D
= 9.3 A
Symbol
D
G
S
ELECTRICAL CHARACTERISICS at
Parameter
Unit
Symbol
Test Conditions
V
(BR)DSS
Drain to Source Breakdown Voltage
V
GS
= 0 V
DC,
Volt
Tj = 25 C Maximum. Unless stated Otherwise
C
OSS
Value
Drain to Source Leakage Current
I
GSS
V
DS
= 200V
DC
, V
GS
= 0V
DC
V
DS
= 160V
DC
, V
GS
= 0V
DC
Typ
-
-
-
-
-
-
Min
Max
-
25
250
200
-
-
-
-
2.0
C
Tj=150
Gate to Source Leakage Current
I
DSS
V
GS
= +20V
DC
100
-100
nA
nA
V
GS
= -20V
DC
Gate Threshold Voltage
V
DS
= V
GS
,
V
GS(th)
Volt
Static Drain to Source On - Resistance R
DS(on)
V
GS
= 10V
DC
, I
D
= 5.4A
Gate Charge
Q
G
I
D
= 5.4A
V
DS
= 160V
DC
,
V
GS
= 10V
DC
nC
nC
nC
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
35
6.5
17
-
-
-
-
-
-
-
Input Capacitance
Output Capacitance
V
DS
= 25V
DC
, V
GS
= 0V
DC
, f = 1.0MHZ
Transfer Capacitance
C
ISS
C
RSS
pF
pF
pF
-
-
-
-
575
89
25
Turn On Delay Time
Turn Off Delay Time
Rise Time
Fall Time
td
(on)
tr
td
(off)
tf
-
-
-
-
-
-
-
-
-
7.9
27
14
15
nS
nS
nS
nS
Continuous Source Current
I
S
Pulsed Source Current
Forward Voltage (Diode)
I
SM
V
SD
V
GS
= 0V
DC
, I
S
=5.4A,
A
A
V
9.3
-
-
-
37
W
Volt
MAXIMUM RATINGS
Gate to Source Voltage
Parameter
Unit
Drain to Source
Voltage
Continuous Drain Current
Amp
I
D
Symbol
V
GS
V
DSS
Amp
Pulsed Drain Current
I
DM
Total Power Dissapation
Thermal Resistance
(Junction to Ambient)
Condition
R
TH
(J-A)
P
D
Value
(Tj = 25 C unless stated otherwise)
200
82
37
9.3
+/- 20V
(T
A
= 25 C)
62
Volt
μA
I
D
= 250μA
Maximum Operating Temperature Range (Tj) -55 to +175 C
I
D
= 250μA
4.0
-
0.30
-
1.3
Tp = 300μS
C/W
V
DD
= 100V
DC
, I
D
= 4.8A, R
G
=18
R
D
= 20
IRF620N IRF630NS IRF630NL
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF630FI | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220VAR |
| IRF635 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 6.5A I(D) | TO-220AB |
| IRF630S | N-channel TrenchMOS transistor |
| IRF630 | N-channel TrenchMOS transistor(N溝道 TrenchMOS 晶體管) |
| IRF630FP | N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF620PBF | 功能描述:MOSFET N-Chan 200V 5.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF620R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB |
| IRF620R4587 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF620S | 功能描述:MOSFET N-Chan 200V 5.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF620SPBF | 功能描述:MOSFET N-Chan 200V 5.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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