參數(shù)資料
型號(hào)： IRF6215PBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 180K
代理商： IRF6215PBF
IRF6215PbF
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -6.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -6.6A
di/dt = -100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
160
1.2
-1.6
240
1.7
V
ns
μC
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-6.6A, di/dt
≤
-620A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 14mH
R
G
= 25
, I
AS
= -6.6A. (See Figure 12)
Source-Drain Ratings and Characteristics
A
S
D
G
-13
-44
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
-150
–––
–––
-0.20 –––
–––
–––
–––
–––
-2.0
–––
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
36
–––
53
–––
37
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= -10V, I
D
= -6.6A , T
J
= 25°C
V
GS
= -10V, I
D
= -6.6A , T
J
= 150°C
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -50V, I
D
= -6.6A
V
DS
= -150V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -6.6A
V
DS
= -120V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -75V
I
D
= -6.6A
R
G
= 6.8
R
D
= 12
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
0.29
0.58
-4.0
–––
-25
-250
100
-100
66
8.1
35
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
860
220
130
–––
–––
–––
pF
S
D
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6215PBF 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:YES
IRF6215S 功能描述:MOSFET P-CH 150V 13A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF6215SHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 150V 13A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 150V 13A 3PIN D2PAK - Bulk
IRF6215SPBF 功能描述:MOSFET 20V -150V P-CH FET 290mOhms 44nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6215SPBF 制造商:International Rectifier 功能描述:MOSFET
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