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參數(shù)資料
| 型號(hào)： | IRF6218 |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開關(guān)電源 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 122K |
| 代理商： | IRF6218 |
IRF6218
www.irf.com
7
Repetitive rating; pulse width limited by max. junction
temperature.
Starting T
J
= 25°C, L = 1.6mH, R
G
= 25
, I
AS
= -17A.
I
SD
≤
-17A, di/dt
≤
-520A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
R is measured at T
J
of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
04/04
Dimensions are shown in millimeters (inches)
3- SOURCE
- B -
1.32 (.052)
1.22 (.048)
3X0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9B 1M
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF630NSTRL | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB |
| IRF630N | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) |
| IRF630NL | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) |
| IRF630NS | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) |
| IRF630NSTRR | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6218HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 150V 27A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 150V 27A 3PIN TO-220AB - Bulk |
| IRF6218L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF6218PBF | 功能描述:MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6218PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6218S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
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