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參數(shù)資料
| 型號(hào)： | IRF630 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFETs, 12A, 150-200 V |
| 中文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | IRF630 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF630, IRF630S
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Low on-state resistance
Fast switching
Low thermal resistance
V
DSS
= 200 V
I
D
= 9 A
R
DS(ON)
≤
400 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using
Trench
technology, intended for use in off-line
switchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuits
and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package
The IRF630S is supplied in the SOT404 (D
2
PAK) surface mounting package
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
±
20
9
6.3
36
88
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF630 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF630 | 制造商:STMicroelectronics 功能描述:MOSFET N 200V 9A TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N, 200V, 9A, TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N, 200V, 9A, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:9A, Drain Source Voltage Vds:200V, On Resistance Rds(on):400mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation , RoHS Compliant: Yes |
| IRF630_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET |
| IRF630_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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