參數(shù)資料
型號(hào): IRF634NS
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 250V,的Rds(on)\u003d 0.435ohm,身份證\u003d 8.0A)
文件頁數(shù): 4/11頁
文件大小: 301K
代理商: IRF634NS
IRF634N/S/L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 175 C
°
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
I =
FOR TEST CIRCUIT
SEE FIGURE
13
4.8A
V
= 50V
DS
V
= 125V
DS
V
= 200V
DS
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
相關(guān)PDF資料
PDF描述
IRF634NSTRL TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB
IRF634NSTRR TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB
IRF634PBF HEXFET㈢ Power MOSFET
IRF634S 30V N-Channel PowerTrench MOSFET
IRF634 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF634NSPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF634NSTRL 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB
IRF634NSTRLPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF634NSTRR 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB
IRF634NSTRRPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube