參數資料
型號: IRF640B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 200V N-Channel MOSFET
中文描述: 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數: 6/9頁
文件大小: 95K
代理商: IRF640B
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF640, IRF640S
Fig.13. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.14. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
AV
);
unclamped inductive load
0
2
4
6
8
10
12
14
16
18
20
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
August 1999
6
Rev 1.100
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相關代理商/技術參數
參數描述
IRF640B_FP001 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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IRF640B_FP01F080 制造商:Fairchild Semiconductor Corporation 功能描述:N-CH/200V/18A/0.18OHM/SUBSTITU
IRF640FI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-220VAR
IRF640FP 功能描述:MOSFET N-Ch 200 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube