參數(shù)資料
型號： IRF6613
廠商： International Rectifier
英文描述： VCXO TCXO VCTCXO
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/8頁
文件大小： 233K
代理商： IRF6613
2
www.irf.com
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.2mH,
R
G
= 25
, I
AS
= 18A.
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of
part.
R
θ
is measured at
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
40
Typ.
–––
Max. Units
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
V
Breakdown Voltage Temp. Coefficient
–––
38
–––
mV/°C
m
Static Drain-to-Source On-Resistance
–––
2.6
3.4
–––
3.1
4.1
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
1.35
–––
2.25
V
Gate Threshold Voltage Coefficient
–––
-5.8
–––
mV/°C
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Q
g
Forward Transconductance
93
–––
–––
S
Total Gate Charge
–––
42
63
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Pre-Vth Gate-to-Source Charge
–––
11.5
–––
Post-Vth Gate-to-Source Charge
–––
3.3
–––
nC
Gate-to-Drain Charge
–––
12.6
–––
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
–––
14.6
–––
See Fig. 6 and 16
–––
15.9
–––
–––
–––
22
18
–––
–––
nC
Rise Time
–––
47
–––
Turn-Off Delay Time
–––
27
–––
ns
Fall Time
–––
4.9
–––
Input Capacitance
–––
5950
–––
Output Capacitance
–––
990
–––
pF
Reverse Transfer Capacitance
–––
460
–––
Diode Characteristics
Parameter
Continuous Source Current
Min.
–––
Typ.
–––
Max. Units
3.5
I
S
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
180
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Q
rr
–––
–––
1.0
V
Reverse Recovery Time
–––
38
57
ns
Reverse Recovery Charge
–––
42
63
nC
MOSFET symbol
Clamped Inductive Load
V
DS
= 15V, I
D
= 18A
Conditions
= 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 18A
V
DS
= 20V
V
GS
= 4.5V
I
D
= 18A
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 4.5V, I
D
= 18A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 32V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 23A
T
J
= 25°C, I
F
= 18A
di/dt = 100A/μs
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V
V
DS
= 15V
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