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參數(shù)資料
| 型號： | IRF6722MTRPbF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 260K |
| 代理商： | IRF6722MTRPBF |
www.irf.com
5
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
Fig 12.
Maximum Drain Current vs. Case Temperature
Fig 10.
Typical Source-Drain Diode Forward Voltage
Fig11.
Maximum Safe Operating Area
Fig 14.
Maximum Avalanche Energy vs. Drain Current
0.2
0.3 0.4
0.5
0.6 0.7 0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
IS
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
25
50
75
100
125
150
TC , Case Temperature (°C)
0
10
20
30
40
50
60
ID
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
T
ID = 50μA
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25°C
TJ = 150°C
Single Pulse
100μsec
1msec
10msec
DC
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
EA
ID
0.98A
1.23A
TOP
BOTTOM 11A
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